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n African Journal of Science, Technology, Innovation and Development - Cu(In,Ga)Se solar cells, numerical simulation and analysis

Volume 8, Issue 4
  • ISSN : 2042-1338
  • E-ISSN: 2042-1346
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Abstract

In this work, we have used a one-dimensional simulation program called the solar cell capacitance simulator (SCAPS) to design solar cells with the structure SnOx/CdS/CIGS (SnOx window, CdS buffer and CIGS absorber material) and study their performance. To improve efficiency we have used a grading layer of CIGS but with different band-gaps. Cu(In,Ga) Se has grading band-gaps varying in range from 1.04 to 1.68 eV, with the corresponding Ga content x = 0 to 1. The grading layer used improves the open-circuit voltage () and also the short-circuit current density (). Photovoltaic parameters were determined using the current density-voltage (-) curve. In addition, we have studied the effects of operating temperature on grading layer CIGS solar cells. Our numerical simulation gives some important indications to lead to higher efficiency of CIGS solar cells.

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/content/aa_ajstid/8/4/EJC198501
2016-01-01
2019-11-21

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