n African Journal of Science, Technology, Innovation and Development - Cu(In,Ga)Se solar cells, numerical simulation and analysis

Volume 8, Issue 4
  • ISSN : 2042-1338
  • E-ISSN: 2042-1346
This article is unavailable for purchase outside of Africa



In this work, we have used a one-dimensional simulation program called the solar cell capacitance simulator (SCAPS) to design solar cells with the structure SnOx/CdS/CIGS (SnOx window, CdS buffer and CIGS absorber material) and study their performance. To improve efficiency we have used a grading layer of CIGS but with different band-gaps. Cu(In,Ga) Se has grading band-gaps varying in range from 1.04 to 1.68 eV, with the corresponding Ga content x = 0 to 1. The grading layer used improves the open-circuit voltage () and also the short-circuit current density (). Photovoltaic parameters were determined using the current density-voltage (-) curve. In addition, we have studied the effects of operating temperature on grading layer CIGS solar cells. Our numerical simulation gives some important indications to lead to higher efficiency of CIGS solar cells.

Loading full text...

Full text loading...


Article metrics loading...


This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error